irg5k50p5k50pm06e IRG5K40PM12E 1 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 module absolute maximum ratings v ces collector to emitter voltage (inverter igbt) 1200 v i c continuous collector current (inverter igbt) t c = 80c 40 a t c = 25c 70 a t jop maximum operating junction temperature range - 40 to +150 c t stg storage temperature - 40 to +125 c v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v m mounting screw: m6 6.0 nm g typical weight 200 g v ces = 1200v i c = 40a at t c = 80c t sc 10sec v ce(on) = 2.30v at i c = 40a converter, inverter, brake (cib) module pow ir eco 2 ? package base part number package type standard pack quantity orderable part number IRG5K40PM12E pow ir eco 2 ? box 80 IRG5K40PM12E applications ? industrial motor drive ? servo drive ? traction inverter features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir eco 2 ? package industry standard lead free rohs compliant, environmental friendly downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 2 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 switching characteristics of inverter igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 105 ns t j = 25c v cc =600v, i c = 40a, r g = 20?, v ge =15v, inductive load 100 t j = 125c t r rise time 75 ns t j = 25c 75 t j = 125c t d(off) turn - off delay time 255 ns t j = 25c 270 t j = 125c t f fall time 170 ns t j = 25c 235 t j = 125c e on turn - on switching loss 3.71 mj t j = 25c 4.82 t j = 125c e off turn - off switching loss 1.71 mj t j = 25c 2.86 t j = 125c q g total gate charge 400 nc t j = 25c absolute maximum ratings of inverter igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 40 a t c = 25c 70 a i cm pulse collector current t j = 150c 80 a p d maximum power dissipation t c = 25c, t j = 150c 340 w electrical characteristics of inverter igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 4.5 5.3 6.0 v i c = 1 ma, v ce = v ge v ce(on) collector to emitter saturation voltage 2.30 2.60 v t j = 25c i c = 40a, v ge = 15v 2.80 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 200 na v ge = 20v, v ce = 0v downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 3 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 switching characteristics of inverter igbt (contd) parameter min. typ. max. unit test conditions c ies input capacitance 5.7 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.38 c res reverse transfer capacitance 0.15 rbsoa reverse bias safe operating area trapezoid i c = 80a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c absolute maximum ratings of inverter freewheeling diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 80 a diode continuous forward current, t c = 80c 40 i fm pulse diode current 80 a electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 2.10 v t j = 25c i f = 40a , v ge = 0v 2.70 2.20 t j = 125c i rr peak reverse recovery current 30 a t j = 25c i f 40 a, di/dt=760a/ s, v rr = 600v, v ge = - 15v 40 t j = 125c q rr reverse recovery charge 2.50 c t j = 25c 4.13 t j = 125c e rec reverse recovery energy 0.84 mj t j = 25c 1.64 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 4 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 absolute maximum ratings of rectifier bridge diode v rrm repetitive peak reverse voltage, t c = 25c 1600 v i frmsm maximum rms forward current per chip, t j = 80c 50 a i rmsm maximum rms current at rectifier output, t j = 80c 60 a i fsm surge current at tp = 10ms, t j = 25c 420 a surge current at tp = 10ms, t j = 150c 350 i 2 t i 2 t value for fusing, t j = 25c 900 a 2 s i 2 t value for fusing, t j = 150c 650 absolute maximum ratings of brake - chopper igbt v ces collector to emitter voltage 1200 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 15 a t c = 25c 30 a i cm pulse collector current t j = 175c 30 a p d maximum power dissipation t c = 25c, t j = 175c 190 w t j maximum igbt junction temperature 175 c t jop maximum operating junction temperature range - 40 to +150 c electrical characteristics of rectifier bridge diode parameter typ. max. unit test conditions v f forward voltage 1.10 1.20 v t j = 25c i f = 40a 1.00 t j = 150c i r reverse current 1 ma t j = 25c v r = v rrm electrical characteristics of brake - chopper igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 1200 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 5.0 5.8 6.5 v i c = 1 ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.90 2.20 v t j = 25c i c = 15a, v ge = 15v 2.20 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 200 na v ge = 20v, v ce = 0v downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 5 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 switching characteristics of brake - chopper igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 175 ns t j = 25c v cc =600v, i c = 15a, r g = 40?, v ge =15v, inductive load 160 t j = 125c t r rise time 50 ns t j = 25c 55 t j = 125c t d(off) turn - off delay time 140 ns t j = 25c 145 t j = 125c t f fall time 245 ns t j = 25c 380 t j = 125c e on turn - on switching loss 1.74 mj t j = 25c 2.08 t j = 125c e off turn - off switching loss 0.63 mj t j = 25c 1.09 t j = 125c q g total gate charge 140 nc t j = 25c c ies input capacitance 2.0 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.77 c res reverse transfer capacitance 0.46 rbsoa reverse bias safe operating area trapezoid i c = 30a,v cc = 960v, v p =1200v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 600v, v ge = 15v, t j = 150c absolute maximum ratings of brake - chopper diode v rrm repetitive peak reverse voltage 1200 v i f diode continuous forward current, t c = 25c 30 a diode continuous forward current, t c = 80c 15 i fm pulse diode current 30 a downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 6 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 ntc - thermistor characteristics typ. max. unit parameter r 25 t c =25c 5 k? ? r/r t c =100c r 100 =481? 5 % p 25 t c =25c 50 mw b 25/50 r 2 =r 25 exp[b 25/50 (1/t 2 - 1/(298.15k))] 3380 k b 25/80 r 2 =r 25 exp[b 25/80 (1/t 2 - 1/(298.15k))] 3440 k module thermal resistance characteristics parameter typ. unit r jc junction - to - case (inverter igbt) 0.442 c/w junction - to - case (freewheeling diode) 0.77 c/w junction - to - case (rectifier bridge diode) 0.90 c/w junction - to - case (brake - chopper igbt) 0.801 c/w junction - to - case (brake - chopper diode) 1.42 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w electrical and switching characteristics of brake - chopper diode parameter typ. unit test conditions max. v f forward voltage 2.00 v t j = 25c i f = 15a , v ge = 0v 2.70 2.20 t j = 125c i rr peak reverse recovery current 12 a t j = 25c i f = 15a , di/dt=380a/ s, v rr = 600v, v ge = - 15v 18 t j = 125c q rr reverse recovery charge 0.7 c t j = 25c 1.4 t j = 125c e rec reverse recovery energy 0.30 mj t j = 25c 0.60 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 7 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 fig.1 typical saturation characteristics, inverter igbt fig.3 typical forward characteristics, freewheeling diode fig.2 typical output characteristics, inverter igbt fig.4 typical capacitance characteristics, inverter igbt fig.5 typical switching loss vs. collector current, inverter igbt fig.6 typical switching loss vs. gate resistance, inverter igbt 0 5 10 15 20 25 0 2 4 6 8 10 v ce = 0 v,f=1mhz c ies c oes c (nf) v ce (v) 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =0v t j =125c t j =25c v f (v) i f (a) 0 10 20 30 40 50 60 70 80 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 v ce (v) i c (a) v ge =15v t j =125c t j =25c 0 10 20 30 40 50 60 70 80 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 v ce (v) i c (a) t j =125c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 e (mj) i c (a) v cc =600v,v ge =+/-15v, rg =20 ohm,t j =125c e off e on e rec 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 e (mj) r g ( ? ) v cc = 600v ,v ge = +/-15v, i c = 40a ,t j = 125 c e off e on e rec downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 8 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 fig.7 typical load current vs. frequency, inverter igbt fig.8 reverse bias safe operation area (rbsoa), inverter igbt fig.9 typical transient thermal impedance, inverter igbt fig.10 typical transient thermal impedance, freewheeling diode fig.11 typical saturation characteristics, brake - chopper igbt fig.12 typical forward characteristics, brake - chopper diode 0 10 20 30 40 50 60 70 1 10 100 duty cycle:50% t j =125c t c =80c r g =20 ohm,v ge =15v frequency (khz) load current (a) square wave: diode as specified v cc i 0 200 400 600 800 1000 1200 0 20 40 60 80 i c (a) v ces (v) module chip 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 0.5 z th jc (k/w) t ( s ) z th jc :igbt 0.001 0.01 0.1 1 2 0.0 0.2 0.4 0.6 0.8 1.0 z th jc ( k/w ) t (s) z th jc :diode 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =15v t j =125c t j =25c v ce (v) i c (a) 0 5 10 15 20 25 30 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =0v t j =125c t j =25c v f (v) i f (a) downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 9 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 fig.13 typical forward characteristics, rectifier bridge diode fig. 14 ntc temperature characteristics 0 10 20 30 40 50 60 70 80 90 100 110 120 0 2 4 6 8 10 12 14 16 18 20 r ( k ohm ) t c (c) rtyp 0 10 20 30 40 50 60 70 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t j =25c t j =150c v f (v) i f (a) downloaded from: http:///
irg5k50p5k50pm06e IRG5K40PM12E 10 www.irf.com ? 2014 international rectifier submit datasheet feedback october 1, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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